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Volumn 100, Issue 15, 2012, Pages

Reliability improvement of InGaZnO thin film transistors encapsulated under nitrogen ambient

(8) Wu, Chun Yu a Cheng, Huang Chung a Wang, Chao Lung a Liao, Ta Chuan a Chiu, Po Chun a Tsai, Chih Hung b Fang, Chun Hsiang b Lee, Chung Chun b

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

b AU OPTRONICS CORPORATION (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS INGAZNO; CHANNEL POTENTIAL; NITROGEN AMBIENT; OXYGEN ADSORPTION; POSITIVE GATE BIAS; RELIABILITY IMPROVEMENT; SATURATION DRAIN CURRENT; THIN FILM TRANSISTORS (TFT);

THIN FILM TRANSISTORS;

GAS ADSORPTION;

EID: 84859798477 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3702794 Document Type: Article

Times cited : (15)

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