Effect of DC bias on the plasma properties in remote plasma atomic layer deposition and its application to Hf O2 thin films

Journal of the Electrochemical Society

Volumn 158, Issue 1, 2011, Pages

  Kim, Hyungchul ^a   Woo, Sanghyun ^a   Lee, Jaesang ^a   Kim, Yongchan ^a   Lee, Hyerin ^a   Choi, Ik Jin ^a   Kim, Young Do ^a   Chung, Chin Wook ^a   Jeon, Hyeongtag ^a  

^a Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN VOLTAGE; DC BIAS; DC BIASED; DIRECT CURRENT; EFFECTIVE OXIDE THICKNESS; ELECTRICAL PROPERTY; PLASMA PROPERTIES; RADIO FREQUENCY PLASMA; REMOTE PLASMAS;

ATOMIC LAYER DEPOSITION; ELECTRIC PROPERTIES; FREE RADICALS; HAFNIUM; PLASMA DENSITY; PLASMAS;

PLASMA DEPOSITION;

EID: 79951974143     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3511769     Document Type: Article

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