Effect of compensation and of metallic impurities on the electrical properties of Cz-grown solar grade silicon

Journal of Applied Physics

Volumn 104, Issue 10, 2008, Pages

  Libal, Joris ^a   Novaglia, Sara ^a   Acciarri, Maurizio ^a   Binetti, Simona ^a   Petres, Roman ^b   Arumughan, Jayaprasad ^b   Kopecek, Radovan ^b   Prokopenko, Aleksander ^c  

^a UNIVERSITY OF MILANO BICOCCA   (Italy)

^b ISC Konstanz   (Germany)

^c Joint Stock Company Pillar (JSC Pillar)   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; BORON; BORON COMPOUNDS; CARRIER LIFETIME; CHARGE CARRIERS; ELECTRIC PROPERTIES; GALVANOMAGNETIC EFFECTS; HALL EFFECT; HALL MOBILITY; INGOTS; NONMETALS; PHOSPHORUS; PHOTOVOLTAIC CELLS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON WAFERS; SOLAR CELLS; SOLAR ENERGY; SOLAR EQUIPMENT;

BULK LIFETIMES; CELL EFFICIENCIES; CHARGE CARRIER LIFETIMES; CZOCHRALSKI; CZOCHRALSKI SILICONS; DETRIMENTAL EFFECTS; ELECTRICAL PROPERTIES; GETTERING EFFECTS; GROWN SAMPLES; HIGH COMPENSATIONS; HIGH CONCENTRATIONS; HIGH EFFICIENCIES; METALLIC IMPURITIES; NORMAL VALUES; PHOSPHORUS DIFFUSIONS; ROOM TEMPERATURES; SOLAR GRADE SILICONS; STRONG CORRELATIONS; WAFER VOLUMES;

MAGNETIC FIELD EFFECTS;

EID: 57049138781     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3021300     Document Type: Article

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