Doping engineering as a method to increase the performance of purified MG silicon during ingot crystallisation

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2009, Pages 001327-001330

  Kraiem, J ^a   Einhaus, R ^a   Lauvray, H ^a  

^a APOLLON SOLAR   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BORON CONCENTRATIONS; COMPENSATION LEVEL; CRYSTALLISATION; DOPANT ATOMS; ELECTRICAL PERFORMANCE; IONIZED DOPANTS; MATERIAL YIELD; METALLURGICAL-GRADE SILICON; NOVEL CONCEPT; PERFORMANCE IMPROVEMENTS; SCATTERING EFFECTS; SEGREGATION COEFFICIENTS; SILICON INGOT; SOLAR CELL EFFICIENCIES;

BORON; BORON COMPOUNDS; CARRIER LIFETIME; CARRIER MOBILITY; CRYSTALLIZATION; DOPING (ADDITIVES); GALLIUM; PHOSPHORUS; PURIFICATION; SOLAR CELLS;

INGOTS;

EID: 77951582416     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2009.5411263     Document Type: Conference Paper

References (7)

1. A.F.B. Braga, et al., Solar Energy Materials and Solar Cells 92, 2007, pp. 418-424.
2. L. J. Geerligs et al., Proceedings of the 17th NREL Workshop, Colorado, 2007, pp. 169-173.
3. S. Dubois et al., Applied Physics Letters, 2008, pp. 93-95.
4. rd European PVSEC, Valencia, 2008, pp951-957.
5. J. Kraiem et al., Proceedings of the 18th NREL Workshop, Colorado, 2008, pp. 169-173.
6. rd European PVSEC, Valencia, 2008, pp 951-957.
7. S. Reggiani et al., IEEE Transactions on Electron Devices 49 (2002) p 490.