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Volumn 48, Issue 3, 2009, Pages 031102-

Temperature dependences of acceptor concentration, conductivity mobility, and resistivity of Ga-doped czochralski-si crystals

(5) Hoshikawa, Takeshi a Taishi, Toshinori a Hoshikawa, Keigo a,b Yonenaga, Ichiro a Uda, Satoshi a

a TOHOKU UNIVERSITY (Japan)

b SHINSHU UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR CONCENTRATIONS; CZOCHRALSKI; DEGREE OF IONIZATION; DOPED CRYSTALS; GA-DOPED; HALL EFFECT MEASUREMENT; P-TYPE SI; SATURATION RANGE; SI CRYSTALS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE; VAN DER PAUW METHOD;

GALLIUM; SEMICONDUCTING GALLIUM COMPOUNDS; TEMPERATURE DISTRIBUTION;

CRYSTALS;

EID: 67650802860 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.48.031102 Document Type: Article

Times cited : (4)

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