Ga co-doping in Cz-grown silicon ingots to overcome limitations of B and P compensated silicon feedstock for PV applications

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 3, 2011, Pages 678-681

  Forster, Maxime ^a,b   Fourmond, Erwann ^b   Einhaus, Roland ^a   Lauvray, Hubert ^a   Kraiem, Jed ^a   Lemiti, Mustapha ^b  

^a APOLLON SOLAR   (France)

^b INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

Co doping; Compensated silicon; Gallium

Indexed keywords

CO-DOPING; COMPENSATED SILICON; DOPING IMPURITIES; HIGH RESISTIVITY; LIGHT-INDUCED DEGRADATION; MAJORITY CARRIERS; MINORITY CARRIER LIFETIMES; MOBILITY MEASUREMENTS; P-TYPE; SILICON FEEDSTOCKS; SILICON INGOT; STANDARD MATERIALS;

BORON; BORON COMPOUNDS; CARRIER LIFETIME; GALLIUM; INGOTS; PHOSPHORUS;

CARRIER MOBILITY;

EID: 79952689597     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201000330     Document Type: Article

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