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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 3, 2011, Pages 729-732

Hall mobility drops in disordered boron-doped Czochralski silicon compensated by thermal donors activation

(6) Veirman, J a Dubois, S a Enjalbert, N a Garandet, J P a Heslinga, D R a Lemiti, M b

a DIF (France)

b UNIVERSITÉ DE LYON (France)

Author keywords

Compensation; Inhomogeneity; Mobility; Scattering; Silicon; Thermal donors

Indexed keywords

BORON-DOPED; CARRIER DENSITY; COMPENSATION; COMPENSATION LEVEL; CZOCHRALSKI SILICON; DOPANT DISTRIBUTION; ELECTROSTATIC POTENTIALS; INHOMOGENEITIES; MAJORITY CARRIERS; MICROSCOPIC VARIATION; MINORITY-CARRIER DIFFUSION-LENGTH MAPPING; MOBILITY; NONUNIFORM; NONUNIFORMITY; THERMAL DONOR; THERMAL DONORS;

BORON; DOPING (ADDITIVES); DROPS; ELECTROSTATICS; HALL MOBILITY; SCATTERING;

GALVANOMAGNETIC EFFECTS;

EID: 79952643196 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.201000223 Document Type: Article

Times cited : (10)

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