Generation and annihilation of boron-oxygen-related recombination centers in compensated p - And n -type silicon

Journal of Applied Physics

Volumn 108, Issue 10, 2010, Pages

  Lim, Bianca ^a   Rougieux, Fiacre ^b   MacDonald, Daniel ^b   Bothe, Karsten ^a   Schmidt, Jan ^a  

^a INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

^b AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

BORON-DOPED; BORON-OXYGEN; CARRIER LIFETIME MEASUREMENTS; CRYSTALLINE SILICONS; CZOCHRALSKI; DEFECT ANNIHILATION; DEFECT CONCENTRATIONS; DEFECT GENERATION; DEFECT KINETICS; DEFECT MODEL; DOPING CONCENTRATION; EXPERIMENTAL DATA; INTERSTITIAL BORON; INTERSTITIAL OXYGEN; LIFETIME REDUCTION; LINEAR DEPENDENCE; N TYPE SILICON; P-TYPE; PHOSPHORUS-DOPED; RECOMBINATION CENTERS; TIME-RESOLVED; TIME-SCALES;

BORON; CARRIER LIFETIME; DOPING (ADDITIVES); OXYGEN; PHOSPHORUS; SILICON;

DEFECTS;

EID: 78650302750     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3511741     Document Type: Conference Paper

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