Electronic properties of highly-doped and compensated solar-grade silicon wafers and solar cells

Journal of Applied Physics

Volumn 109, Issue 10, 2011, Pages

  Veirman, J ^a   Dubois, S ^a   Enjalbert, N ^a   Garandet, J P ^a   Lemiti, M ^b  

^a DIF   (France)

^b UNIVERSITÉ DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BORON CONTENT; CELL LEVELS; CELL MANUFACTURING; COMPENSATION EFFECTS; COMPENSATION LEVEL; CURRENT MODELS; HIGH CONVERSION EFFICIENCY; INCOMPLETE IONIZATION; IV CHARACTERISTICS; MAJORITY CARRIERS; MINORITY-CARRIER MOBILITY; PHOSPHORUS DIFFUSION; SILICON FEEDSTOCKS; WAFER LEVEL;

BORON; CARRIER CONCENTRATION; CARRIER LIFETIME; CONVERSION EFFICIENCY; DOPING (ADDITIVES); ELECTRIC PROPERTIES; ELECTRONIC PROPERTIES; METAL CASTINGS; PHOSPHORUS; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS;

CARRIER MOBILITY;

EID: 79958841012     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3585800     Document Type: Conference Paper

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