Transport properties of p-type compensated silicon at room temperature

Progress in Photovoltaics: Research and Applications

Volumn 19, Issue 7, 2011, Pages 787-793

  Rougieux, F E ^a   MacDonald, D ^a   Cuevas, A ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

compensation; electron; Hall Factor; hole; mobility; silicon

Indexed keywords

CARRIER RECOMBINATION; EXPERIMENTAL DATA; HALL FACTOR; HOLE; MINORITY-CARRIER MOBILITY; MOBILITY MODEL; P-TYPE; ROOM TEMPERATURE; SCATTERING MECHANISMS;

GALVANOMAGNETIC EFFECTS; HALL MOBILITY; HOLE MOBILITY;

TRANSPORT PROPERTIES;

EID: 80054949322     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.1036     Document Type: Article

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