Analysis of contributing factors for determining the reliability characteristics of GaN-Based white light-emitting diodes with dual degradation kinetics

IEEE Transactions on Electron Devices

Volumn 60, Issue 1, 2013, Pages 186-191

  Jung, Eunjin ^a   Kim, Min Soo ^b   Kim, Hyunsoo ^a  

^a Chonbuk National University   (South Korea)

^b Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Degradation; light emitting diode (LED); reliability

Indexed keywords

AGING TEMPERATURES; AGING TESTS; CONTRIBUTING FACTOR; DEGRADATION KINETICS; NONRADIATIVE DEFECTS; OPTICAL OUTPUT; RELIABILITY CHARACTERISTICS; TEMPERATURE DEPENDENT; WHITE LIGHT EMITTING DIODES;

ACTIVATION ENERGY; ARRHENIUS PLOTS; DEFECTS; DEGRADATION; DIODES; FACTOR ANALYSIS; GALLIUM ALLOYS; GALLIUM NITRIDE; KINETICS; LEAKAGE CURRENTS; PACKAGING MATERIALS; RELIABILITY; RELIABILITY ANALYSIS; TESTING;

LIGHT EMITTING DIODES;

EID: 84871729763     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2226039     Document Type: Article

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