Transport-mechanism analysis of the reverse leakage current in GaInN light-emitting diodes

Applied Physics Letters

Volumn 99, Issue 25, 2011, Pages

  Shan, Qifeng ^a,b   Meyaard, David S ^a,b   Dai, Qi ^a,b,d   Cho, Jaehee ^a,b   Fred Schubert, E ^a,b   Kon Son, Joong ^c   Sone, Cheolsoo ^c  

^a Rensselaer Polytechnic Institute   (United States)

^b RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^d Bridgelux Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE MEASUREMENTS; CURRENT-VOLTAGE MEASUREMENTS; DOPING CONCENTRATION; HIGH TEMPERATURE; LOW TEMPERATURES; MULTI-STEP; REVERSE LEAKAGE CURRENT; ROOM TEMPERATURE; TEMPERATURE DEPENDENT; THERMAL ACTIVATION ENERGIES; THERMALLY ACTIVATED; TUNNELING MODELS; TUNNELING PROCESS; VARIABLE-RANGE-HOPPING CONDUCTIONS;

ACTIVATION ENERGY; ARRHENIUS PLOTS; LEAKAGE CURRENTS; LIGHT EMISSION; VOLTAGE MEASUREMENT;

LIGHT EMITTING DIODES;

EID: 84555197133     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3668104     Document Type: Article

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