Radiation effects in pinned photodiode CMOS image sensors: Pixel performance degradation due to total ionizing dose

IEEE Transactions on Nuclear Science

Volumn 59, Issue 6, 2012, Pages 2878-2887

  Goiffon, Vincent ^a   Estribeau, Magali ^a   Marcelot, Olivier ^a   Cervantes, Paola ^a   Magnan, Pierre ^a   Gaillardin, Marc ^b   Virmontois, Cédric ^a   Martin Gonthier, Philippe ^a   Molina, Romain ^a   Corbiere, Franck ^a   Girard, Sylvain ^c   Paillet, Philippe ^b   Marcandella, Claude ^b  

^a UNIVERSITÉ DE TOULOUSE   (France)

^b DIF   (France)

^c UNIVERSITÉ JEAN MONNET   (France)

Author keywords

4T pixel; active pixel sensor; APS; buried photodiode; charge transfer; CMOS image sensor (CIS); dark current; deep submicron process; DSM; interface states; ionizing radiation; MAPS; monolithic active pixel sensor; photon transfer curve (PTC); pinned photodiode (PPD); pinning voltage; pre metal dielectrics (PMD); quantum efficiency; radiation hardening; RHBD; shallow trench isolation (STI); total ionizing dose (TID); trapped charge

Indexed keywords

ACTIVE PIXEL SENSOR; APS; CMOS IMAGE SENSOR; DEEP SUB-MICRON PROCESS; DSM; MONOLITHIC ACTIVE PIXEL SENSORS; PHOTON TRANSFER CURVE; PINNED PHOTODIODE (PPD); PREMETAL DIELECTRICS; RHBD; SHALLOW TRENCH ISOLATION; TOTAL IONIZING DOSE; TRAPPED CHARGE;

CHARGE TRANSFER; DARK CURRENTS; DIELECTRIC MATERIALS; DIGITAL CAMERAS; DIODES; INTERFACE STATES; IRRADIATION; MAPS; PHOTODIODES; PIXELS; QUANTUM EFFICIENCY; RADIATION HARDENING; RADIATION SHIELDING; SEMICONDUCTING SILICON; SENSORS; TELEGRAPH;

IONIZING RADIATION;

EID: 84871399866     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2012.2222927     Document Type: Article

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