Analysis of total dose-induced dark current in CMOS image sensors from interface state and trapped charge density measurements

IEEE Transactions on Nuclear Science

Volumn 57, Issue 6 PART 1, 2010, Pages 3087-3094

  Goiffon, V ^a   Virmontois, C ^a   Magnan, P ^a   Girard, S ^b   Paillet, P ^b  

^a UNIVERSITÉ DE TOULOUSE   (France)

^b DIF   (France)

Author keywords

Active pixel sensors (APS); CMOS image sensors (CIS); dark current; deep submicrometer process; FOXFET; interface states; ionizing radiation; PMDFET; shallow trench isolation (STI); total ionizing dose (TID); trapped charge

Indexed keywords

ACTIVE PIXEL SENSOR; CMOS IMAGE SENSOR; DEEP SUBMICROMETER; FOXFET; INTERFACE STATE; PMDFET; SHALLOW TRENCH ISOLATION; TOTAL IONIZING DOSE; TRAPPED CHARGE;

DARK CURRENTS; DENSITOMETERS; DENSITY MEASUREMENT (OPTICAL); DENSITY MEASUREMENT (SPECIFIC GRAVITY); DIGITAL CAMERAS; ELECTROMAGNETIC INDUCTION; IMAGE SENSORS; LEAD OXIDE; PIXELS; RADIATION SHIELDING; RADIOACTIVITY; SEMICONDUCTING SILICON;

IONIZING RADIATION;

EID: 78649557573     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2010.2077653     Document Type: Conference Paper

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