Radiation effects on CMOS image sensors with sub-2μm pinned photodiodes

Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

Volumn , Issue , 2011, Pages 314-320

  Place, S ^a,b   Carrere, J P ^a   Magnan, P ^b   Goiffon, V ^b   Roy, F ^a  

^a STMICROELECTRONICS   (France)

^b UNIVERSITÉ DE TOULOUSE   (France)

Author keywords

activation energy; APS; CMOS 4T image sensor; dark current; Irradiation; pinned photodiode; temporal noise

Indexed keywords

APS; BEHAVIOR ANALYSIS; BURIED OXIDES; CMOS IMAGE SENSOR; COMMERCIAL SENSORS; MULTIPLE SENSORS; PHENOMENOLOGICAL APPROACH; PIXEL PITCH; TEMPORAL NOISE; TEMPORAL NOISE ANALYSIS; TOTAL IONIZING DOSE;

ACTIVATION ENERGY; DARK CURRENTS; IONIZING RADIATION; IRRADIATION; PHOTODIODES; SENSORS; SPACE APPLICATIONS;

RADIATION EFFECTS;

EID: 84860130842     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RADECS.2011.6131310     Document Type: Conference Paper

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