Overview of ionizing radiation effects in image sensors fabricated in a deep-submicrometer CMOS imaging technology

IEEE Transactions on Electron Devices

Volumn 56, Issue 11, 2009, Pages 2594-2601

  Goiffon, Vincent ^a   Estribeau, Magali ^a   Magnan, Pierre ^a  

^a UNIVERSITÉ DE TOULOUSE   (France)

Author keywords

Active pixel sensors (APSs); CMOS image sensors (CISs); Dark current; Ionizing radiation; Microlenses; Quantum efficiency; Radiation hardening by design; Responsivity; Total dose

Indexed keywords

ACTIVE PIXEL SENSORS (APSS); CMOS IMAGE SENSORS (CISS); RADIATION HARDENING BY DESIGN; RESPONSIVITY; TOTAL DOSE;

DIGITAL CAMERAS; DIGITAL IMAGE STORAGE; HARDENING; IMAGE SENSORS; IONIZING RADIATION; MICROLENSES; PHASE SHIFTERS; PIXELS; QUANTUM EFFICIENCY; RADIATION HARDENING; RADIATION SHIELDING; RADIOACTIVITY; SEMICONDUCTOR QUANTUM DOTS; SOLID-STATE SENSORS; TRANSIENTS;

RADIATION EFFECTS;

EID: 70350721639     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2030623     Document Type: Review

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