New mechanism of plasma induced damage on CMOS image sensor: Analysis and process optimization

2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010

Volumn , Issue , 2010, Pages 106-109

  Carrere J P ^a   Oddou, J P ^a   Richard, C ^a   Jenny, C ^a   Gatefait, M ^a   Place, S ^a   Aumont, C ^a   Tournier, A ^a   Roy, F ^a  

^a STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS IMAGE SENSOR; DIELECTRIC LAYER; NEW MECHANISMS; NITRIDE LAYERS; P-LAYER; PHOTO GENERATION; PIXEL ARCHITECTURES; PLASMA ETCH; PLASMA INDUCED DAMAGE; PROCESS OPTIMIZATION;

DIGITAL CAMERAS; IMAGE SENSORS; NITRIDES; OPTIMIZATION; PHOTODIODES; PLASMAS; SOLID STATE DEVICES;

PIXELS;

EID: 78649922663     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2010.5617725     Document Type: Conference Paper

References (9)

1. M. Cohen and JP. David, "Radiation-Induced Dark Current in CMOS Active Pixel Sensors", IEEE Trans. Nucl. Sci., vol. 47, pp. 2485-2491, Dec. 2000.
2. Flora M. Li, Nixon O, and Arokia Nathan, "Degradation Behavior and Damage Mechanisms of CCD Image Sensor With Deep-UV Laser Radiation", IEEE Trans. on Elec Dev., vol. 51, no. 12, pp. 2229-2236, 2004.
3. V. Goiffon, E. Magali, P. Magnan, "Overview of Ionizing Radiation Effects in Image Sensors Fabricated in a Deep-Submicrometer", IEEE trans. on electron devices A. 2009, vol. 56, no. 11, pp. 2594-2601.
4. Ken Tokashiki, KeunHee Bai, KyeHyun Baek, Yongjin Kim, Gyungjin Min, Changjin Kang, Hanku Cho, Jootae Moon, "Study of plasma charging-induced white pixel defect increase in CMOS active pixel sensor", Thin Solid Films 515, pp. 4864-4868, 2007.
5. D. Benoit, J. Regolini, P. Morin, "Hydrogen desorption and diffusion in PECVD silicon nitride. Application to passivation of CMOS active pixel sensors", Microelectronic engineering., vol. 84, no. 9-10, pp. 2169-2172, 2007.
6. K. P. Cheung and C. P. Chang, "Plasma-Charging Damage : A Physical Model", J. Appl. Phys. Vol 75, pp. 4415, 1994.
7. K.P. Giapis, G.S. Hwang, "Pattern-dependant and the role of electron tunneling", Jpn. J. Appl. Phys., vol. 37, no. 4B, pp. 2281-2290, 1998.
8. 2/Si Induced by vuv Photons" Jpn. J. Appl. Phys., vol. 29, no.10, pp. 2269-2272, October 1990.
9. Diana Lopez, Cédric Leyris, Stéphane Ricq, Francis Balestra, "Noise as a characterization tool for reliability under illumination of transfer gate transistor for image sensors applications", Proc. of ESSDERC conf, pp. 395-398, 2009.