Total dose evaluation of deep submicron CMOS imaging technology through elementary device and pixel array behavior analysis

IEEE Transactions on Nuclear Science

Volumn 55, Issue 6, 2008, Pages 3494-3501

  Goiffon, V ^a   Magnan, P ^a   Saint Pe O ^b   Bernard, F ^c   Rolland, G ^c  

^a UNIVERSITÉ DE TOULOUSE   (France)

^b AIRBUS GROUP INNOVATIONS   (Germany)

^c CNES   (France)

Author keywords

Active pixel sensors (APS); CMOS image sensors (CIS); Field oxide FET (FOXFET); Gated diode; Inter layer dielectric FET (ILDFET); Ionizing radiation; Radiation hardening by design (RHDB); Total dose

Indexed keywords

CHEMICAL MECHANICAL POLISHING; DEGRADATION; DIELECTRIC MATERIALS; DIGITAL CAMERAS; DIGITAL IMAGE STORAGE; DIODES; FIELD EFFECT TRANSISTORS; HARDENING; HETEROJUNCTION BIPOLAR TRANSISTORS; IMAGE SENSORS; IONIZING RADIATION; MESFET DEVICES; MOSFET DEVICES; PHASE SHIFTERS; PHOTODIODES; PIXELS; RADIATION; RADIATION HARDENING; RADIATION PROTECTION; RADIATION SHIELDING; RADIOACTIVITY; SENSORS;

ACTIVE PIXEL SENSORS (APS); CMOS IMAGE SENSORS (CIS); FIELD OXIDE FET (FOXFET); GATED DIODE; INTER LAYER DIELECTRIC FET (ILDFET); RADIATION-HARDENING-BY-DESIGN (RHDB); TOTAL DOSE;

RADIATION EFFECTS;

EID: 58849130601     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2008.2005294     Document Type: Conference Paper

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