Multilevel RTS in proton irradiated CMOS image sensors manufactured in a deep submicron technology

IEEE Transactions on Nuclear Science

Volumn 56, Issue 4, 2009, Pages 2132-2141

  Goiffon, V ^a   Hopkinson, G R ^b   Magnan, P ^a   Bernard, F ^c   Rolland, G ^c   Saint Pe, O ^d  

^a UNIVERSITÉ DE TOULOUSE   (France)

^b SURREY SATELLITE TECHNOLOGY LTD   (United Kingdom)

^c CNES   (France)

^d AIRBUS GROUP INNOVATIONS   (Germany)

Author keywords

Active pixel sensors (APS); CMOS image sensors (CIS); Dark current; Proton irradiation; Random telegraph signal (RTS)

Indexed keywords

ACTIVE PIXEL SENSORS (APS); AMPLITUDE DISTRIBUTIONS; APPLIED BIAS; AUTOMATED METHODS; CMOS IMAGE SENSOR; CMOS IMAGE SENSORS (CIS); CMOS PROCESSS; DEEP SUB-MICRON TECHNOLOGY; DISPLACEMENT DAMAGE DOSE; FLUENCE RANGE; MAIN CHARACTERISTICS; MAXIMUM AMPLITUDE; NONIONIZING ENERGY LOSS; PIXEL ARRAYS; PROTON ENERGY; RANDOM TELEGRAPH SIGNAL (RTS); RANDOM TELEGRAPH SIGNALS;

DIGITAL CAMERAS; DIGITAL IMAGE STORAGE; ELECTRIC FIELDS; ENERGY DISSIPATION; PHASE SHIFTERS; PIXELS; PROTON IRRADIATION; PROTONS; TELEGRAPH;

IMAGE SENSORS;

EID: 69549122119     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2009.2014759     Document Type: Conference Paper

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