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Volumn , Issue , 2011, Pages 412-415

Design of a radiation tolerant CMOS image sensor

Author keywords

[No Author keywords available]

Indexed keywords

BIASING CURRENT; CMOS IMAGE SENSOR; PHYSICAL LAYOUT; PIXEL ARRAYS; PROTOTYPE CHIP; RADIATION TOLERANT; TEMPERATURE FLUCTUATION;

EID: 84863031216     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISICir.2011.6131984     Document Type: Conference Paper
Times cited : (10)

References (12)
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  • 3
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    • S. Chen, A. Bermak, and Y. Wang, "A cmos image sensor with onchip image compression based on predictive boundary adaptation and memoryless qtd algorithm," IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 19, no. 4, pp. 538-547, april 2011.
    • (2011) IEEE Transactions on Very Large Scale Integration (VLSI) Systems , vol.19 , Issue.4 , pp. 538-547
    • Chen, S.1    Bermak, A.2    Wang, Y.3
  • 4
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    • Radiation effects and hardening of mos technology: Devices and circuits
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    • (2003) IEEE Trans. Nuclear Science , vol.50 , Issue.3 , pp. 500-521
    • Hughes, H.1    Benedetto, J.2
  • 5
    • 0031341863 scopus 로고    scopus 로고
    • Employing radiation hardness by design techniques with commercial integrated circuit processes
    • Oct. vol. 1
    • D. Mavis and D. Alexander, "Employing radiation hardness by design techniques with commercial integrated circuit processes," in AIAA/IEEE 16th Digital Avionics Systems Conference, 1997, vol. 1, Oct. 1997, pp. 2.1-15-22 vol.1.
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    • Mavis, D.1    Alexander, D.2
  • 6
    • 70350721639 scopus 로고    scopus 로고
    • Overview of ionizing radiation effects in image sensors fabricated in a deep-submicrometer cmos imaging technology
    • V. Goiffon, M. Estribeau, and P. Magnan, "Overview of ionizing radiation effects in image sensors fabricated in a deep-submicrometer cmos imaging technology," IEEE Trans. Electron Devices, vol. 56, no. 11, pp. 2594-2601, 2009.
    • (2009) IEEE Trans. Electron Devices , vol.56 , Issue.11 , pp. 2594-2601
    • Goiffon, V.1    Estribeau, M.2    Magnan, P.3
  • 7
    • 58849130601 scopus 로고    scopus 로고
    • Total dose evaluation of deep submicron cmos imaging technology through elementary device and pixel array behavior analysis
    • V. Goiffon, P. Magnan, O. Saint-pe, F. Bernard, and G. Rolland, "Total dose evaluation of deep submicron cmos imaging technology through elementary device and pixel array behavior analysis," IEEE Trans. Nuclear Science, vol. 55, no. 6, pp. 3494-3501, 2008.
    • (2008) IEEE Trans. Nuclear Science , vol.55 , Issue.6 , pp. 3494-3501
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  • 8
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    • Degradation of spectral response and dark current of CMOS image sensors in deep-submicron technology due to γ-irradiation
    • DOI 10.1109/ESSDERC.2007.4430955, 4430955, ESSDERC07 - 2007 37th European Solid State Device Research Conference
    • P. Rao, X. Wang, and A. Theuwissen, "Degradation of spectral response and dark current of cmos image sensors in deep-submicron technology due to gamma-irradiation," in 37th European Solid State Device Research Conference (ESSDERC), 2007, pp. 370-373. (Pubitemid 351278254)
    • (2008) ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference , pp. 370-373
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  • 10
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  • 11
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  • 12
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.