-
1
-
-
78649518581
-
Robust intermediate readout for deep submicron technology cmos image sensors
-
march
-
C. Shoushun, F. Boussaid, and A. Bermak, "Robust intermediate readout for deep submicron technology cmos image sensors," IEEE Sensors Journal, vol. 8, no. 3, pp. 286-294, march 2008.
-
(2008)
IEEE Sensors Journal
, vol.8
, Issue.3
, pp. 286-294
-
-
Shoushun, C.1
Boussaid, F.2
Bermak, A.3
-
2
-
-
77956002268
-
A 64 × 64 pixels uwb wireless temporal-difference digital image sensor
-
june
-
S. Chen, W. Tang, and E. Culurciello, "A 64 × 64 pixels uwb wireless temporal-difference digital image sensor," in Proceedings of 2010 IEEE International Symposium on Circuits and Systems (ISCAS), june 2010, pp. 1404-1407.
-
(2010)
Proceedings of 2010 IEEE International Symposium on Circuits and Systems (ISCAS)
, pp. 1404-1407
-
-
Chen, S.1
Tang, W.2
Culurciello, E.3
-
3
-
-
79953077025
-
A cmos image sensor with onchip image compression based on predictive boundary adaptation and memoryless qtd algorithm
-
april
-
S. Chen, A. Bermak, and Y. Wang, "A cmos image sensor with onchip image compression based on predictive boundary adaptation and memoryless qtd algorithm," IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 19, no. 4, pp. 538-547, april 2011.
-
(2011)
IEEE Transactions on Very Large Scale Integration (VLSI) Systems
, vol.19
, Issue.4
, pp. 538-547
-
-
Chen, S.1
Bermak, A.2
Wang, Y.3
-
4
-
-
0038447119
-
Radiation effects and hardening of mos technology: Devices and circuits
-
H. Hughes and J. Benedetto, "Radiation effects and hardening of mos technology: devices and circuits," IEEE Trans. Nuclear Science, vol. 50, no. 3, pp. 500-521, 2003.
-
(2003)
IEEE Trans. Nuclear Science
, vol.50
, Issue.3
, pp. 500-521
-
-
Hughes, H.1
Benedetto, J.2
-
5
-
-
0031341863
-
Employing radiation hardness by design techniques with commercial integrated circuit processes
-
Oct. vol. 1
-
D. Mavis and D. Alexander, "Employing radiation hardness by design techniques with commercial integrated circuit processes," in AIAA/IEEE 16th Digital Avionics Systems Conference, 1997, vol. 1, Oct. 1997, pp. 2.1-15-22 vol.1.
-
(1997)
AIAA/IEEE 16th Digital Avionics Systems Conference, 1997
, vol.1
, pp. 2115-2122
-
-
Mavis, D.1
Alexander, D.2
-
6
-
-
70350721639
-
Overview of ionizing radiation effects in image sensors fabricated in a deep-submicrometer cmos imaging technology
-
V. Goiffon, M. Estribeau, and P. Magnan, "Overview of ionizing radiation effects in image sensors fabricated in a deep-submicrometer cmos imaging technology," IEEE Trans. Electron Devices, vol. 56, no. 11, pp. 2594-2601, 2009.
-
(2009)
IEEE Trans. Electron Devices
, vol.56
, Issue.11
, pp. 2594-2601
-
-
Goiffon, V.1
Estribeau, M.2
Magnan, P.3
-
7
-
-
58849130601
-
Total dose evaluation of deep submicron cmos imaging technology through elementary device and pixel array behavior analysis
-
V. Goiffon, P. Magnan, O. Saint-pe, F. Bernard, and G. Rolland, "Total dose evaluation of deep submicron cmos imaging technology through elementary device and pixel array behavior analysis," IEEE Trans. Nuclear Science, vol. 55, no. 6, pp. 3494-3501, 2008.
-
(2008)
IEEE Trans. Nuclear Science
, vol.55
, Issue.6
, pp. 3494-3501
-
-
Goiffon, V.1
Magnan, P.2
Saint-Pe, O.3
Bernard, F.4
Rolland, G.5
-
8
-
-
39549107335
-
Degradation of spectral response and dark current of CMOS image sensors in deep-submicron technology due to γ-irradiation
-
DOI 10.1109/ESSDERC.2007.4430955, 4430955, ESSDERC07 - 2007 37th European Solid State Device Research Conference
-
P. Rao, X. Wang, and A. Theuwissen, "Degradation of spectral response and dark current of cmos image sensors in deep-submicron technology due to gamma-irradiation," in 37th European Solid State Device Research Conference (ESSDERC), 2007, pp. 370-373. (Pubitemid 351278254)
-
(2008)
ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference
, pp. 370-373
-
-
Rao, P.R.1
Wang, X.2
Theuwissen, A.J.P.3
-
9
-
-
78651454759
-
Radiation effects on cmos image sensors due to x-rays
-
J. Tan, B. Buettgen, and A. Theuwissen, "Radiation effects on cmos image sensors due to x-rays," in 2010 8th International Conference on Advanced Semiconductor Devices Microsystems (ASDAM), 2010, pp. 279-282.
-
(2010)
2010 8th International Conference on Advanced Semiconductor Devices Microsystems (ASDAM)
, pp. 279-282
-
-
Tan, J.1
Buettgen, B.2
Theuwissen, A.3
-
10
-
-
84863036197
-
A radiation tolerant 4t pixel for space applications
-
Bergen, Norway, 2009
-
M. Innocent, "A radiation tolerant 4t pixel for space applications," in International Image Sensor Workshop, Bergen, Norway, 2009., 2009.
-
(2009)
International Image Sensor Workshop
-
-
Innocent, M.1
-
11
-
-
0442279708
-
The analysis of dark signals in the cmos aps imagers from the characterization of test structures
-
H. I. Kwon, I. M. Kang, B.-G. Park, J. D. Lee, and S. S. Park, "The analysis of dark signals in the cmos aps imagers from the characterization of test structures," IEEE Trans. Electron Devices, vol. 51, no. 2, pp. 178-184, 2004.
-
(2004)
IEEE Trans. Electron Devices
, vol.51
, Issue.2
, pp. 178-184
-
-
Kwon, H.I.1
Kang, I.M.2
Park, B.-G.3
Lee, J.D.4
Park, S.S.5
-
12
-
-
84949950499
-
Design of radiation hard cmos aps image sensors for space applications
-
E. El-Sayed, "Design of radiation hard cmos aps image sensors for space applications," in 17th National Radio Science Conference, 2000.
-
(2000)
17th National Radio Science Conference
-
-
El-Sayed, E.1
|