Rad Tolerant CMOS Image Sensor Based on Hole Collection 4T Pixel Pinned Photodiode

IEEE Transactions on Nuclear Science

Volumn 59, Issue 6, 2012, Pages 2888-2893

  Place, Sébastien ^a,b   Carrere, Jean Pierre ^a   Allegret, Stephane ^a   Roy, Francois ^a   Magnan, Pierre ^b   Goiffon, Vincent ^b  

^a STMICROELECTRONICS   (France)

^b UNIVERSITÉ DE TOULOUSE   (France)

Author keywords

Active pixel sensors; APS; CIS; CMOS 4T image sensor; CMOS image sensors; dark current; hole collection pinned photodiode; hole based detector; pinned photodiode

Indexed keywords

EID: 85008540987     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.2012.2223486     Document Type: Article

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