Enhanced radiation-induced narrow channel effects in commercial 0.18 μ m bulk technology

IEEE Transactions on Nuclear Science

Volumn 58, Issue 6 PART 1, 2011, Pages 2807-2815

  Gaillardin, Marc ^a   Goiffon, Vincent ^b   Girard, Sylvain ^a   Martinez, Martial ^a   Magnan, Pierre ^b   Paillet, Philippe ^a  

^a DIF   (France)

^b UNIVERSITÉ DE TOULOUSE   (France)

Author keywords

Deep submicron (DSM) bulk technology; metal oxide semiconductor (MOS) transistors; radiation induced narrow channel effect (RINCE); total ionizing dose

Indexed keywords

BULK TECHNOLOGIES; CIRCUIT OPERATION; DEVICE GEOMETRIES; ELECTRICAL CHARACTERISTIC; INPUT/OUTPUT; METAL OXIDE SEMICONDUCTOR; NARROW CHANNEL; P-TYPE; POSITIVE CHARGES; RADIATION-INDUCED; THRESHOLD VOLTAGE SHIFTS; TOTAL IONIZING DOSE; TOTAL IONIZING DOSE EFFECTS;

CHARGE TRAPPING; IONIZING RADIATION; RADIATION HARDENING; THRESHOLD VOLTAGE; TRANSISTORS;

RADIATION EFFECTS;

EID: 83855162213     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2011.2170854     Document Type: Conference Paper

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