-
1
-
-
77949291119
-
A 5.5 Mpixel 100 frames/sec wide dynamic range low noise CMOS image sensor for scientific applications
-
B. Fowler, C. Liu, S. Mims, J. Balicki, W. Li, H. Do, J. Appelbaum, and P. Vu, "A 5.5 Mpixel 100 frames/sec wide dynamic range low noise CMOS image sensor for scientific applications," in Procs of SPIE, vol. 7536, 2010, p. 753607.
-
(2010)
Procs of SPIE
, vol.7536
, pp. 753607
-
-
Fowler, B.1
Liu, C.2
Mims, S.3
Balicki, J.4
Li, W.5
Do, H.6
Appelbaum, J.7
Vu, P.8
-
2
-
-
50349102391
-
Degradation of CMOS image sensors in deep-submicron technology due to γ-irradiation
-
Sep.
-
P. R. Rao, X. Wang, and A. J. P. Theuwissen, "Degradation of CMOS image sensors in deep-submicron technology due to γ-irradiation, "Solid-State Electron., vol. 52, no. 9, pp. 1407-1413, Sep. 2008.
-
(2008)
Solid-State Electron.
, vol.52
, Issue.9
, pp. 1407-1413
-
-
Rao, P.R.1
Wang, X.2
Theuwissen, A.J.P.3
-
3
-
-
84865380736
-
A radiation tolerant 4t pixel for space applications
-
M. Innocent, "A radiation tolerant 4t pixel for space applications," in Proc. IISW, 2009.
-
Proc. IISW, 2009
-
-
Innocent, M.1
-
4
-
-
79953814425
-
A low noise pixel architecture for scientific CMOS monolithic active pixel sensors
-
R. E. Coath, J. P. Crooks, A. Godbeer, M. D. Wilson, Z. Zhang, M. Stanitzki, M. Tyndel, and R. A. D. Turchetta, "A low noise pixel architecture for scientific CMOS monolithic active pixel sensors," IEEE Trans. Nucl. Sci., 2010.
-
(2010)
IEEE Trans. Nucl. Sci.
-
-
Coath, R.E.1
Crooks, J.P.2
Godbeer, A.3
Wilson, M.D.4
Zhang, Z.5
Stanitzki, M.6
Tyndel, M.7
Turchetta, R.A.D.8
-
5
-
-
78649576507
-
Evaluation of 10MeV proton irradiation on 5.5 Mpixel scientific CMOS image sensor
-
P. Vu, B. Fowler, B. Rodricks, J. Balicki, S. Mims, and W. Li, "Evaluation of 10MeV proton irradiation on 5.5 Mpixel scientific CMOS image sensor," in Proc. SPIE, vol. 7826, no. 60, 2010.
-
(2010)
Proc. SPIE
, vol.7826
, Issue.60
-
-
Vu, P.1
Fowler, B.2
Rodricks, B.3
Balicki, J.4
Mims, S.5
Li, W.6
-
6
-
-
84865379979
-
4t cmos image sensor pixel degradation due to x-ray radiation
-
J. Tan, B. Bttgen, and A. Theuwissen, "4t cmos image sensor pixel degradation due to x-ray radiation," in Proc. IISW, 2011.
-
Proc. IISW, 2011
-
-
Tan, J.1
Bttgen, B.2
Theuwissen, A.3
-
7
-
-
0442279708
-
The analysis of dark signals in the CMOS APS imagers from the characterization of test structures
-
Feb.
-
H. Kwon, I. Kang, B. Park, J. Lee, and S. Park, "The analysis of dark signals in the CMOS APS imagers from the characterization of test structures," IEEE Trans. Electron Devices, vol. 51, no. 2, pp. 178-184, Feb. 2004.
-
(2004)
IEEE Trans. Electron Devices
, vol.51
, Issue.2
, pp. 178-184
-
-
Kwon, H.1
Kang, I.2
Park, B.3
Lee, J.4
Park, S.5
-
8
-
-
77954030724
-
Effects of negative-bias operation and optical stress on dark current in CMOS image sensors
-
Jul.
-
T. Watanabe, J.-H. Park, S. Aoyama, K. Isobe, and S. Kawahito, "Effects of negative-bias operation and optical stress on dark current in CMOS image sensors," IEEE Trans. Electron Devices, vol. 57, no. 7, pp. 1512-1518, Jul. 2010.
-
(2010)
IEEE Trans. Electron Devices
, vol.57
, Issue.7
, pp. 1512-1518
-
-
Watanabe, T.1
Park, J.-H.2
Aoyama, S.3
Isobe, K.4
Kawahito, S.5
-
9
-
-
0031249402
-
CMOS image sensors: Electronic camera-on-a-chip
-
Oct.
-
E. R. Fossum, "CMOS image sensors: electronic camera-on-a-chip, "IEEE Trans. Electron Devices, vol. 44, no. 10, pp. 1689-1698, Oct. 1997.
-
(1997)
IEEE Trans. Electron Devices
, vol.44
, Issue.10
, pp. 1689-1698
-
-
Fossum, E.R.1
-
10
-
-
77954034645
-
Evaluation of a small negative transfer gate bias on the performance of 4t CMOS image sensor pixels
-
H. Han, H. Park, P. Altice, W. Choi, Y. Lim, S. Lee, S. Kang, J. Kim, K. Yoon, and J. Hynecek, "Evaluation of a small negative transfer gate bias on the performance of 4t CMOS image sensor pixels," in Proc. IISW, 2007.
-
Proc. IISW, 2007
-
-
Han, H.1
Park, H.2
Altice, P.3
Choi, W.4
Lim, Y.5
Lee, S.6
Kang, S.7
Kim, J.8
Yoon, K.9
Hynecek, J.10
-
11
-
-
41749086903
-
Negative offset operation of four-transistor CMOS image pixels for increased well capacity and suppressed dark current
-
B. Mheen, Y. Song, and A. Theuwissen, "Negative offset operation of four-transistor CMOS image pixels for increased well capacity and suppressed dark current," IEEE Electron Device Lett., vol. 29, no. 4, pp. 347-349, 2008.
-
(2008)
IEEE Electron Device Lett.
, vol.29
, Issue.4
, pp. 347-349
-
-
Mheen, B.1
Song, Y.2
Theuwissen, A.3
-
12
-
-
49949136852
-
Surface effects on p-n junctions: Characteristics of surface space-charge regions under non-equilibrium conditions
-
Aug.
-
A. S. Grove and D. J. Fitzgerald, "Surface effects on p-n junctions: Characteristics of surface space-charge regions under non-equilibrium conditions," Solid-State Electron., vol. 9, no. 8, pp. 783-806, Aug. 1966.
-
(1966)
Solid-State Electron.
, vol.9
, Issue.8
, pp. 783-806
-
-
Grove, A.S.1
Fitzgerald, D.J.2
-
13
-
-
0018506275
-
Electric field effect on the thermal emission of traps in semiconductor junctions
-
Aug.
-
G. Vincent, A. Chantre, and D. Bois, "Electric field effect on the thermal emission of traps in semiconductor junctions," J. Appl. Phys., vol. 50, no. 8, pp. 5484-5487, Aug. 1979.
-
(1979)
J. Appl. Phys.
, vol.50
, Issue.8
, pp. 5484-5487
-
-
Vincent, G.1
Chantre, A.2
Bois, D.3
-
14
-
-
77957803869
-
Analysis of dark current in 4-transistor CMOS imager pixel with negative transfer-gate bias operation
-
H. Yamashita, M. Maeda, S. Furuya, and T. Yagami, "Analysis of dark current in 4-transistor CMOS imager pixel with negative transfer-gate bias operation," in Proc. IISW, 2009, pp. 04-1.
-
Proc. IISW, 2009
, pp. 04-11
-
-
Yamashita, H.1
Maeda, M.2
Furuya, S.3
Yagami, T.4
-
15
-
-
34250798651
-
Interface trap-enhanced gate-induced leakage current in MOSFET
-
May
-
I. Chen, C. Teng, D. Coleman, A. Nishimura, T. Inc, and T. Dallas, "Interface trap-enhanced gate-induced leakage current in MOSFET,"IEEE Electron Device Lett., vol. 10, no. 5, pp. 216-218, May 1989.
-
(1989)
IEEE Electron Device Lett.
, vol.10
, Issue.5
, pp. 216-218
-
-
Chen, I.1
Teng, C.2
Coleman, D.3
Nishimura, A.4
Inc, T.5
Dallas, T.6
-
16
-
-
84860130842
-
Radiation effects on CMOS image sensors with sub-2μm pinned photodiodes
-
S. Place, J. Carrere, P. Magnan, V. Goiffon, and F. Roy, "Radiation effects on CMOS image sensors with sub-2μm pinned photodiodes," in Proc. RADECS, 2011.
-
Proc. RADECS, 2011
-
-
Place, S.1
Carrere, J.2
Magnan, P.3
Goiffon, V.4
Roy, F.5
-
17
-
-
78649922663
-
New mechanism of plasma induced damage on CMOS image sensor: Analysis and process optimization
-
J. P. Carrere, J. P. Oddou, C. Richard, C. Jenny, M. Gatefait, S. Place, C. Aumont, A. Tournier, and F. Roy, "New mechanism of plasma induced damage on CMOS image sensor: Analysis and process optimization,"in Proc. ESSDERC, Sep. 2010, pp. 106-109.
-
Proc. ESSDERC, Sep. 2010
, pp. 106-109
-
-
Carrere, J.P.1
Oddou, J.P.2
Richard, C.3
Jenny, C.4
Gatefait, M.5
Place, S.6
Aumont, C.7
Tournier, A.8
Roy, F.9
-
18
-
-
83855165150
-
Generic radiation hardened photodiode layouts for deep submicron CMOS image sensor processes
-
submitted for publication in
-
V. Goiffon, P. Cervantes, C. Virmontois, F. Corbiere, P. Magnan, and M. Estribeau, "Generic radiation hardened photodiode layouts for deep submicron CMOS image sensor processes," submitted for publication in IEEE Trans. Nucl. Sci.
-
IEEE Trans. Nucl. Sci.
-
-
Goiffon, V.1
Cervantes, P.2
Virmontois, C.3
Corbiere, F.4
Magnan, P.5
Estribeau, M.6
-
19
-
-
58849130601
-
Total dose evaluation of deep submicron CMOS imaging technology through elementary device and pixel array behavior analysis
-
Dec.
-
V. Goiffon, P. Magnan, O. Saint-Pé, F. Bernard, and G. Rolland, "Total dose evaluation of deep submicron CMOS imaging technology through elementary device and pixel array behavior analysis," IEEE Trans. Nucl. Sci., vol. 55, no. 6, pp. 3494-3501, Dec. 2008.
-
(2008)
IEEE Trans. Nucl. Sci.
, vol.55
, Issue.6
, pp. 3494-3501
-
-
Goiffon, V.1
Magnan, P.2
Saint-Pé, O.3
Bernard, F.4
Rolland, G.5
-
20
-
-
0031341054
-
Total dose testing of a CMOS charged particle spectrometer
-
Dec.
-
B. Hancock and G. Soli, "Total dose testing of a CMOS charged particle spectrometer," IEEE Trans. Nucl. Sci., vol. 44, no. 6, pp. 1957-1964, Dec. 1997.
-
(1997)
IEEE Trans. Nucl. Sci.
, vol.44
, Issue.6
, pp. 1957-1964
-
-
Hancock, B.1
Soli, G.2
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