Low dose rate effects in shallow trench isolation regions

IEEE Transactions on Nuclear Science

Volumn 57, Issue 6 PART 1, 2010, Pages 3279-3287

  Johnston, A H ^a   Swimm, R T ^a   Miyahira, T F ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

CMOS; modeling; radiation effects; shallow trench isolation (STI); total dose

Indexed keywords

CMOS; DOSE DEPENDENCES; DOSE-RATE EFFECTS; HIGH DOSE RATE; LOW DOSE RATE; MODELING; SHALLOW TRENCH ISOLATION; THREE-DIMENSIONAL MODELING; TOTAL DOSE;

DOSIMETRY; RADIATION EFFECTS; THREE DIMENSIONAL;

SEMICONDUCTING SILICON;

EID: 78650319149     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2010.2085452     Document Type: Conference Paper

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