HfO2 nanocrystal memory on SiGe channel

Solid-State Electronics

Volumn 80, Issue , 2013, Pages 5-9

  Lin, Yu Hsien ^a   Chien, Chao Hsin ^b  

^a NATIONAL UNITED UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Flash memory; Hafnium oxide; Nanocrystals; Nonvolatile memories; SiGe channel

Indexed keywords

HIGH-SPEED PROGRAM; LOW POWER APPLICATION; MEMORY WINDOW; NANOCRYSTAL MEMORIES; NON-VOLATILE MEMORIES; OXYNITRIDES; PROGRAM/ERASE; RETENTION TIME; SIGE CHANNELS; STRONG IMMUNITY; TUNNEL OXIDES;

FLASH MEMORY; GERMANIUM; HAFNIUM OXIDES; NANOCRYSTALS; NITRIDES; SEMICONDUCTOR STORAGE;

SILICON ALLOYS;

EID: 84871213589     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2012.10.009     Document Type: Article

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