Nanocrystal memories for FLASH device applications

Solid-State Electronics

Volumn 48, Issue 9, 2004, Pages 1483-1488

  Ammendola, Giuseppe ^a   Ancarani, Valentina ^a   Triolo, Virginia ^a   Bileci, Marco ^a   Corso, Domenico ^b   Crupi, Isodiana ^b   Perniola, Luca ^c   Gerardi, Cosimo ^a   Lombardo, Salvatore ^b   DeSalvo, Barbara ^c  

^a STMICROELECTRONICS   (Italy)

^b CNR IMM   (Italy)

^c CEA LETI   (France)

Author keywords

Flash memory; Nanocrystals; Reliability

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; ELECTRON BEAM LITHOGRAPHY; FLASH MEMORY; GATES (TRANSISTOR); POLYSILICON; RELIABILITY; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY;

EQUIVALENT OXIDE THICKNESS (EOT); FLASH TECHNOLOGY; NANOCRYSTALS; SHALLOW TRENCH ISOLATION (STI);

NANOSTRUCTURED MATERIALS;

EID: 2942668179     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.03.012     Document Type: Article

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