Enhanced CHISEL programming in flash memory devices with SiGe buried layer

Proceedings 2004 Non-Volatile Memory Technology Symposium, NVMTS 2004

Volumn , Issue , 2004, Pages 31-33

  Weltzer, L M ^a   Banerjee, S K ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL HOT ELECTRONS (CHE); CHANNEL-INITIATED SECONDARY ELECTRON (CHISEL); ELECTRICALLY ERASABLE AND PROGRAMMABLE READ-ONLY MEMORY (EEPROM); SECONDARY IMPACT IONIZATION (SII);

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; ELECTRIC FIELDS; ELECTRIC POTENTIAL; IMPACT IONIZATION; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM DOTS; SILICA;

FLASH MEMORY;

EID: 18844402868     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

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