TiSi2 nanocrystal metal oxide semiconductor field effect transistor memory

IEEE Transactions on Nanotechnology

Volumn 10, Issue 3, 2011, Pages 499-505

  Zhou, Huimei ^a   Li, Bei ^a,b   Yang, Zheng ^a,c   Zhan, Ning ^a   Yan, Dong ^a   Lake, Roger K ^a   Liu, Jianlin ^a  

^a University of California Riverside   (United States)

^b Intermolecular Inc   (United States)

^c HARVARD UNIVERSITY   (United States)

Author keywords

Nonvolatile memory (NVM); TiSi2 nanocrystal (NC)

Indexed keywords

CMOS COMPATIBLE; MEMORY WINDOW; METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS; METALLIC PROPERTIES; NANOCRYSTAL MEMORIES; NON-VOLATILE MEMORIES; NONVOLATILE MEMORY DEVICES; RETENTION LIFETIME; SIMULATION RESULT; THERMALLY STABLE; TISI2 NANOCRYSTAL (NC);

FIELD EFFECT TRANSISTORS; METALLIC COMPOUNDS; MOS DEVICES; NANOCRYSTALS; NONVOLATILE STORAGE; SEMICONDUCTING SILICON; SILICIDES;

TITANIUM COMPOUNDS;

EID: 79955919868     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2010.2049271     Document Type: Article

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