Large lateral photovoltaic effect in metal-(oxide-) semiconductor structures

Sensors (Switzerland)

Volumn 10, Issue 11, 2010, Pages 10155-10180

  Yu, Chongqi ^a   Wang, Hui ^a  

^a Shanghai Jiao Tong University   (China)

Author keywords

Lateral phtotvoltaic effect (LPE); Metal oxidesemiconductor (MOS); Metal semiconductor (MS)

Indexed keywords

LATERAL PHTOTVOLTAIC EFFECT (LPE); LIGHT SPOT POSITION; METAL OXIDE SEMICONDUCTOR STRUCTURES; METAL SEMICONDUCTORS; METAL-OXIDESEMICONDUCTOR (MOS); POSITION-SENSITIVE DETECTORS; SEMICONDUCTOR STRUCTURE; SMALL DISPLACEMENT;

OPTICAL SENSORS; PHOTOVOLTAIC EFFECTS;

METALS;

OXIDE;

ARTICLE; CHEMISTRY; EQUIPMENT DESIGN; METHODOLOGY; PHOTOCHEMISTRY; SEMICONDUCTOR;

EQUIPMENT DESIGN; OXIDES; PHOTOCHEMISTRY; SEMICONDUCTORS;

EID: 84871099981     PISSN: 14248220     EISSN: None     Source Type: Journal    
DOI: 10.3390/s101110155     Document Type: Review

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