A novel position-sensitive detector based on metal-oxide-semiconductor structures of Co-SiO2-Si

New Journal of Physics

Volumn 10, Issue , 2008, Pages

  Xiao, S Q ^a   Wang, H ^a   Yu, C Q ^a   Xia, Y X ^a   Lu, J J ^a   Jin, Q Y ^b   Wang, Z H ^c  

^a SHANGHAI JIAO TONG UNIVERSITY   (China)

^b FUDAN UNIVERSITY   (China)

^c NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COBALT; DETECTORS; ELECTRIC CONDUCTIVITY; METALS; OPTICAL SENSORS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR MATERIALS; SILICON COMPOUNDS;

METAL-OXIDE SEMICONDUCTOR (MOS); P N JUNCTIONS; POSITION SENSITIVE DETECTOR (PSD);

SEMICONDUCTOR JUNCTIONS;

EID: 46249084646     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/10/3/033018     Document Type: Article

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