SCOPUS 정보 검색 플랫폼

Advanced Materials

Volumn 22, Issue 9, 2010, Pages 966-970

Light-induced bipolar-resistance effect based on metal-oxide-semiconductor structures of Ti/SiO2/Si

(2) Yu, Chongqi a Wang, Hui a

a SHANGHAI JIAO TONG UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHANGE RATIO; METAL OXIDE SEMICONDUCTOR STRUCTURES; SPATIAL SENSITIVITY;

SURFACE STRUCTURE;

SEMICONDUCTOR LASERS;

SILICON DIOXIDE; TITANIUM;

ARTICLE; CHEMISTRY; ELECTROCHEMISTRY; EQUIPMENT; EQUIPMENT DESIGN; IMPEDANCE; INSTRUMENTATION; LIGHT; MATERIALS TESTING; PHOTOCHEMISTRY; RADIATION EXPOSURE; SEMICONDUCTOR;

ELECTRIC IMPEDANCE; ELECTROCHEMISTRY; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; LIGHT; MATERIALS TESTING; PHOTOCHEMISTRY; SEMICONDUCTORS; SILICON DIOXIDE; TITANIUM;

EID: 77649211598 PISSN: 09359648 EISSN: 15214095 Source Type: Journal
DOI: 10.1002/adma.200903070 Document Type: Article

Times cited : (63)

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