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Volumn 51, Issue 2-3, 1995, Pages 135-142

Large-area 1D thin-film position-sensitive detector with high detection resolution

Author keywords

Amorphous silicon; Large area devices; Position sensitive detectors; Thin films

Indexed keywords

AMORPHOUS SILICON; DIODES; ELECTRIC NETWORK ANALYSIS; OPTOELECTRONIC DEVICES; THIN FILM DEVICES;

EID: 0000372450     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/0924-4247(95)01214-1     Document Type: Article
Times cited : (76)

References (19)
  • 1
    • 0000366312 scopus 로고
    • Uber den entstehungsort der photoelektronen in kupferkupferoxydull-photozellen
    • (1930) Phys. Zeit. , vol.31 , pp. 913-925
    • Schottky1
  • 8
    • 84921194973 scopus 로고    scopus 로고
    • Y. Hamakawa, Recent progress of amorphous silicon solar cell technology, Proc. 6th IPVSEC, New Delhi, India, 1992, pp. 3–10
  • 11
    • 34548213506 scopus 로고
    • Photoeffects in nonuniformly irradiated p-n junctions
    • (1960) J. Appl. Phys. , vol.31 , pp. 1088-1095
    • Lucovsky1
  • 12
    • 0029292137 scopus 로고
    • The lateral photoeffect in large area 1-D thin film position sensitive detectors based in a-Si:H p-i-n devices
    • (1995) Rev. Sci. Instrum. , vol.66 , pp. 2927
    • Martins1    Fortunato2
  • 16
    • 84921194972 scopus 로고    scopus 로고
    • F. Soares and R. Martins, internal report (in Portuguese)
  • 17
    • 84921194971 scopus 로고    scopus 로고
    • R. Martins and E. Fortunato, Dark current-voltage characteristics in transverse asymmetric hydrogenated amorphous silicon diodes, J. Appl. Phys., 78 (in press)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.