Ultrafast and high-sensitivity photovoltaic effects in TiN/Si Schottky junction

Journal of Physics D: Applied Physics

Volumn 41, Issue 19, 2008, Pages

  Xing, Jie ^a   Jin, Kuijuan ^a   He, Meng ^a   Lu, Huibin ^a   Liu, Guozhen ^a   Yang, Guozhen ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

PHOTOELECTRICITY; PHOTOVOLTAIC EFFECTS; SILICON;

HE-NE LASERS; HIGH SENSITIVITIES; INCIDENT LASER; LATERAL DIRECTIONS; PHOTO VOLTAGE; PICO SECONDS; POSITION SENSITIVITY; RESPONSE SPEED; SCHOTTKY JUNCTIONS; SI SUBSTRATE; ULTRA-FAST;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 53349175180     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/41/19/195103     Document Type: Article

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