Parallel connection of integrated gate commutated thyristors (IGCTs) and diodes

IEEE Transactions on Power Electronics

Volumn 24, Issue 9, 2009, Pages 2159-2170

  Hermann, Robert ^a,b   Bernet, Steffen ^c   Suh, Yongsug ^d   Steimer, Peter K ^e  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b Siemens   (Germany)

^c DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^d Chonbuk National University   (South Korea)

^e ABB SWITZERLAND LTD   (Switzerland)

Author keywords

Balancing inductor; Current deviation; Integrated gate commutated thyristor (IGCT); Parallel; Unbalance

Indexed keywords

A-THERMAL; ASYMMETRICAL CIRCUITS; BUCK CONVERTERS; CURRENT DEVIATION; CURRENT-SHARING; DEVICE CHARACTERISTICS; INTEGRATED GATE COMMUTATED THYRISTOR (IGCT); INTEGRATED GATE-COMMUTATED THYRISTORS; JUNCTION TEMPERATURES; PARALLEL; PARALLEL CONNECTIONS; PARALLEL-CONNECTED; POSSIBLE SOLUTIONS; RELIABLE OPERATION; STATIONARY CURRENTS; STEADY STATE; SWITCHING TRANSIENT; UNBALANCE;

DIODES; ELECTRIC CONNECTORS; ELECTRIC INVERTERS; ELECTRIC SWITCHGEAR; MAGNETIC COUPLINGS; SEMICONDUCTOR DIODES;

THYRISTORS;

EID: 70049097910     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2009.2021837     Document Type: Article

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