Bipolar 6.5 kV-SiC-diodes: On the road to industrial application

2005 European Conference on Power Electronics and Applications

Volumn 2005, Issue , 2005, Pages

  Bartsch, Wolfgang ^a   Elpelt, Rudolf ^a   Schoerner, Reinhold ^a   Dohnke, Karl Otto ^a   Bloecher, Bernd ^b   Koerber, Klaus ^b  

^a SiCED Electronics Development GmbH and Co KG   (Germany)

^b SIEMENS AG   (Germany)

Author keywords

Bipolar device; High power discrete device; Measurement; Passive component; Power semiconductor device

Indexed keywords

ALUMINUM; BIPOLAR INTEGRATED CIRCUITS; DIODES; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); SILICON CARBIDE;

BIPOLAR DEVICES; HIGH POWER DISCRETE DEVICES; PASSIVE COMPONENTS; POWER SEMICONDUCTOR DEVICES;

INDUSTRIAL APPLICATIONS;

EID: 33947731992     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/epe.2005.219731     Document Type: Conference Paper

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