Ge/Si photodetectors and group IV alloy based photodetector materials

Optical and Quantum Electronics

Volumn 41, Issue 7, 2009, Pages 567-581

  Basu, P K ^a   Das, N R ^a   Mukhopadhyay , Bratati ^a   Sen, Gopa ^a   Das, Mukul K ^b  

^a UNIVERSITY OF CALCUTTA   (India)

^b INDIAN SCHOOL OF MINES   (India)

Author keywords

Direct gap in Ge; Franz keldysh effect; Ge SiGe quantum wells; Gesn and sgesn alloys; Photodetectors; Quantum Confined Stark Effect

Indexed keywords

BAND ALIGNMENTS; CALCULATED VALUES; EXTERNAL QUANTUM EFFICIENCY; FRANZ KELDYSH EFFECT; GE/SIGE QUANTUM WELLS; GROUP IV ALLOYS; MULTIPLE QUANTUM WELLS; NEW MATERIAL; PHOTO DETECTION; PREDICTED PERFORMANCE; QUANTUM CONFINED STARK EFFECT; QUANTUM WELL; RESONANT CAVITY ENHANCED; SCHOTTKY PHOTODETECTORS; SI/SIGE; STRAINED-GE;

ALLOYS; GERMANIUM; OPTICAL INTERCONNECTS; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SPECTROSCOPY; STARK EFFECT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 77954751962     PISSN: 03068919     EISSN: 1572817X     Source Type: Journal    
DOI: 10.1007/s11082-010-9362-6     Document Type: Article

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