Mid- to long-wavelength infrared plasmonicphotonics using heavily doped n-Ge/Ge and n-GeSn/GeSn heterostructures

Optics Express

Volumn 20, Issue 4, 2012, Pages 3814-3824

  Soref, Richard ^a   Hendrickson, Joshua ^b   Cleary, Justin W ^b  

^a UNIVERSITY OF MASSACHUSETTS BOSTON   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; PLASMONS; TIN;

COMPLEX PERMITTIVITY; EFFECTIVE-MASS THEORY; FREE CARRIER CONCENTRATION; HEAVILY DOPED; LONG-WAVELENGTH INFRARED; N-TYPE GE; PLASMA WAVELENGTH; PLASMONIC; PLASMONIC PROPERTIES; PLASMONICS; PROPAGATION LOSS; WAVEGUIDE STRUCTURE; WAVELENGTH RANGES;

GERMANIUM;

EID: 84857296416     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.20.003814     Document Type: Article

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