Strain-balanced GezSn1-z-SixGe ySn1-x-y multiple-quantum-well lasers

IEEE Journal of Quantum Electronics

Volumn 46, Issue 12, 2010, Pages 1813-1820

  Chang, Guo En ^a   Chang, Shu Wei ^a   Chuang, Shun Lien ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

GeSn alloy; optical gain; SiGeSn alloy; silicon photonics; strain balanced multiple quantum well (MQW); strained QW lasers

Indexed keywords

GESN ALLOY; SIGESN ALLOY; SILICON PHOTONICS; STRAIN-BALANCED MULTIPLE-QUANTUM-WELL (MQW); STRAINED QW LASERS;

CONDUCTION BANDS; ELECTRON MOBILITY; GERMANIUM; HETEROJUNCTIONS; OPTICAL GAIN; PHOTONIC DEVICES; QUANTUM WELL LASERS; SILICON; SILICON ALLOYS; TIN; TIN ALLOYS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 78149270923     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2010.2059000     Document Type: Article

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