Study of evanescently-coupled and grating-assisted GaInAsSb photodiodes integrated on a silicon photonic chip

Optics Express

Volumn 20, Issue 11, 2012, Pages 11665-11672

  Gassenq, Alban ^a   Hattasan, Nannicha ^a   Cerutti, Laurent ^b   Rodriguez, Jean Batiste ^b   Tournié, Eric ^b   Roelkens, Gunther ^a  

^a GHENT UNIVERSITY   (Belgium)

^b UNIVERSITÉ MONTPELLIER II   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFRACTION GRATINGS; INTEGRATION; WAVEGUIDES;

ADHESIVE BONDING; EVANESCENT COUPLING; GAINASSB; INTEGRATED PHOTODIODES; PHOTODIODE STRUCTURES; RESPONSIVITY; ROOM TEMPERATURE; SHORT WAVE INFRARED; SILICON PHOTONICS; SILICON WAVEGUIDE;

PHOTODIODES;

GALLIUM; GALLIUM ARSENIDE; INDIUM; INDIUM ARSENIDE; ORGANOARSENIC DERIVATIVE; SILICON;

ARTICLE; CHEMISTRY; EQUIPMENT; EQUIPMENT DESIGN; INFRARED RADIATION; INSTRUMENTATION; LIGHT; PHOTOMETRY; RADIATION SCATTERING; REFRACTOMETRY; SEMICONDUCTOR; SURFACE PLASMON RESONANCE; SYSTEM ANALYSIS;

ARSENICALS; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GALLIUM; INDIUM; INFRARED RAYS; LIGHT; PHOTOMETRY; REFRACTOMETRY; SCATTERING, RADIATION; SEMICONDUCTORS; SILICON; SURFACE PLASMON RESONANCE; SYSTEMS INTEGRATION;

EID: 84861494391     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.20.011665     Document Type: Article

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