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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 6, 2008, Pages 1952-1959

Ge1-y Sny photoconductor structures at 1.55 μm: From advanced materials to prototype devices

(8) Roucka, R a Xie, J a Kouvetakis, J a Mathews, J a D'Costa, V a Menndez J a Tolle, J b Yu, S Q c

a ARIZONA STATE UNIVERSITY (United States)

b Silicon Photonics Group Inc (United States)

c Arizona State University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE MATERIALS; ADVANCED MATERIALS; ALLOY SYSTEMS; DEFECT REDUCTIONS; DEVICE GENERATIONS; ENHANCED MOBILITIES; EX-SITU; FIRST GENERATIONS; IMPROVED PERFORMANCES; LOW TEMPERATURES; METALLIZATION; NEAR-IR; OPTICALLY ACTIVES; PHOTOCONDUCTIVE RESPONSES; PROTOTYPE DETECTORS; PROTOTYPE DEVICES; SECOND GENERATIONS; SEMI-CONDUCTORS; SI SUBSTRATES; SI TECHNOLOGIES; SIMULTANEOUS REDUCTIONS;

CARRIER MOBILITY; ELECTRIC CONDUCTIVITY; IN SITU PROCESSING; OHMIC CONTACTS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON; SILICON ALLOYS;

SEMICONDUCTING SILICON;

EID: 57249103709 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.3021024 Document Type: Article

Times cited : (39)

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