Study of the aluminum doping of zinc oxide films prepared by atomic layer deposition at low temperature

Applied Surface Science

Volumn 264, Issue , 2013, Pages 464-469

  Genevée, Pascal ^a,b,c   Donsanti, Frederique ^a,b,c   Renou, Gilles ^a,b,c   Lincot, Daniel ^a,b,c  

^a EDF R AND D   (France)

^b CNRS   (France)

^c PSL RESEARCH UNIVERSITY   (France)

Author keywords

Aluminum doped zinc oxide; Atomic layer deposition; Low temperature; Zinc oxide

Indexed keywords

ALUMINUM OXIDE; ATOMIC LAYER DEPOSITION; CARRIER CONCENTRATION; II-VI SEMICONDUCTORS; METALLIC FILMS; OPTICAL FILMS; OPTICAL PROPERTIES; SEMICONDUCTOR DOPING; TEMPERATURE; TRANSPARENT CONDUCTING OXIDES; ZINC OXIDE;

ALUMINUM CONTENTS; ALUMINUM DOPING; ALUMINUM-DOPED ZINC OXIDE; BURSTEIN-MOSS SHIFT; ELECTRICAL AND OPTICAL PROPERTIES; FREE CARRIER ABSORPTION; LOW TEMPERATURES; ZNO:AL FILMS;

ALUMINUM COATINGS;

EID: 84870558385     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2012.10.045     Document Type: Article

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