Atomic layer deposition of Al-doped ZnO films: Effect of grain orientation on conductivity

Chemistry of Materials

Volumn 22, Issue 16, 2010, Pages 4769-4775

  Dasgupta, Neil P ^a   Neubert, Sebastian ^a   Lee, Wonyoung ^a   Trejo, Orlando ^a   Lee, Jung Rok ^a   Prinz, Fritz B ^a,b  

^a STANFORD UNIVERSITY   (United States)

^b Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AL COMPOSITION; AL CONTENT; AL-CONCENTRATION; AL-DOPED ZNO; FILM RESISTIVITY; GRAIN ORIENTATION; GRAIN SIZE; LATTICE PARAMETERS; MICRO-STRUCTURAL; OPTICAL TRANSPARENCY; SAPPHIRE SUBSTRATES; SAPPHIRE SURFACE; SCANNING TUNNELING MICROSCOPY (STM); SEM; SUBSTRATE TEMPERATURE; TEXTURED GRAINS; XRD; ZNO;

ALUMINUM; ATOMIC LAYER DEPOSITION; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SCANNING TUNNELING MICROSCOPY; SUBSTRATES; X RAY DIFFRACTION; ZINC; ZINC OXIDE;

BOROSILICATE GLASS;

EID: 77955679881     PISSN: 08974756     EISSN: 15205002     Source Type: Journal    
DOI: 10.1021/cm101227h     Document Type: Article

References (29)

1. Schulze, K.; Maennig, B.; Leo, K.; Tomita, Y.; May, C.; Hüpkes, J.; Brier, E.; Reinold, E.; Bäuerle, P. Appl. Phys. Lett. 2007, 91, 073521
2. Chen, M.; Pei, Z. L.; Sun, C.; Gong, J.; Huang, R. F.; Wen, L. S. Mater. Sci. Eng. B. 2001, 85, 212
3. Görrn, P.; Sander, M.; Meyer, J.; Kröger, M.; Becker, E.; Johannes, H.-H.; Kowalsky, W.; Riedl, T. Adv. Mater. 2006, 18, 738
4. Tomita, Y.; May, C.; Toerker, M.; Amelung, J.; Eritt, M.; Loeffler, F.; Luber, C.; Leo, K.; Walzer, K.; Fehse, K.; Huang, Q. Appl. Phys. Lett. 2007, 91, 063510
5. Kim, H.; Gilmore, C. M.; Pique, A.; Horwitz, J. S.; Mattoussi, H.; Murata, H.; Kafafi, Z. H.; Chrisey, D. B. J. Appl. Phys. 1999, 86, 6451
6. Coutts, T. J.; Young, D. L.; Li, X.; Mulligan, W. P.; Wu, X. J. Vac. Sci. Technol. A 2000, 18, 2646
7. Minami, T.; Suzuki, S.; Miyata, T. Thin Solid Films 2001, 398-399, 53
8. Igasaki, Y.; Kanma, H. Appl. Surf. Sci. 2001, 169-170, 508
9. Hiramatsu, M.; Imaeda, K.; Horo, N.; Nawata, M. J. Vac. Sci. Technol. A 1998, 16, 669
10. Martin, A.; Espinos, J. P.; Justo, A.; Holgado, J. P.; Yubero, F.; Gonzalez-Elipe, A. R. Surf. Coat. Technol. 2002, 151-152, 289
11. Ohyama, M.; Kozuka, H.; Yoko, T. J. Am. Ceram. Soc. 1998, 81, 1622
12. Kessler, J.; Bodegård, M.; Hedström, J.; Stolt, L. Sol. Energy Mater. Sol. Cells 2001, 67, 67
13. George, S. Chem. Rev. 2010, 110, 111
14. Lujala, V.; Skarp, J.; Tammenmaa, M.; Suntola, T. Appl. Surf. Sci. 1994, 82/83, 34
15. Yousfi, E. B.; Weinberger, B.; Donsanti, F.; Cowache, P.; Lincot, D. Thin Solid Films 2001, 387, 29
16. Kwon, S. J.; Lee, H. J.; Seo, Y. W.; Jeong, H. S. J. Korean Phys. Soc. 2003, 43, 709
17. Park, S.-H. K.; Lee, J.-I.; Hwang, C.-S.; Chu, H. Y. Jpn. J. Appl. Phys. 2005, 44, L242
18. Lim, J.; Lee, C. Thin Solid Films 2007, 515, 3335
19. Na, J.-S.; Peng, Q.; Scarel, G.; Parsons, G. N. Chem. Mater. 2009, 21, 5585
20. Kong, B. H.; Choi, M. K.; Cho, H. K.; Kim, J. H.; Baek, S.; Lee, J.-H. Electrochem. Solid-State Lett. 2010, 13, K12
21. Martinson, A. B. F.; Elam, J. W.; Hupp, J. T.; Pellin, M. J. Nano Lett. 2007, 7, 2183
22. Zhu, J.; Hsu, C.-M.; Yu, Z.; Fan, S.; Cui, Y. Nano. Lett. 2010, 10 (6), 1979-1984.
23. Dasgupta, N. P.; Mack, J. F.; Langston, M. C.; Bousetta, A.; Prinz, F. B. Rev. Sci. Instrum. 2010, 81, 044102
24. Bahşi, Z. B.; Aslan, M. H.; Ozer, M.; Oral, A. Y. Cryst. Res. Technol. 2009, 44, 961
25. Shukla, R. K.; Srivastava, A.; Srivastava, A.; Dubey, K. C. J. Cryst. Growth 2006, 294, 427
26. Sun, X. W.; Kwok, H. S. J. Appl. Phys. 1999, 86, 408
27. Akiyama, S.; Minegishi, K.; Tanaka, T.; Ogawa, H.; Kasuga, M. Jpn. J. Appl. Phys. 2007, 46, 342
28. Chen, Y.; Bagnall, D. M.; Koh, H.-J.; Park, K.-T.; Hiraga, K.; Zhu, Z.; Yao, T. J. Appl. Phys. 1998, 84, 3912
29. Lee, J.-H.; Park, B.-O. Thin Solid Films 2003, 426, 94