-
2
-
-
44049087683
-
Stable ZnO thin film transistors by fast open air atomic layer deposition
-
DOI 10.1063/1.2924768
-
D. H. Levy, D. Freeman, S. F. Nelson, P. J. Cowdery-Corvan, and L. M. Irving, Appl. Phys. Lett. 92, 192101 (2008). 10.1063/1.2924768 (Pubitemid 351713436)
-
(2008)
Applied Physics Letters
, vol.92
, Issue.19
, pp. 192101
-
-
Levy, D.H.1
Freeman, D.2
Nelson, S.F.3
Cowdery-Corvan, P.J.4
Irving, L.M.5
-
4
-
-
0003944113
-
-
2nd ed. (Wiley, New York).
-
R. B. Bird, W. E. Stewart, and E. N. Lightfoot, Transport Phenomena, 2nd ed. (Wiley, New York, 2007).
-
(2007)
Transport Phenomena
-
-
Bird, R.B.1
Stewart, W.E.2
Lightfoot, E.N.3
-
5
-
-
79955161600
-
-
10.1116/1.3572232
-
J. T. Tanskanen, J. R. Bakke, T. A. Pekkanen, and S. F. Bent, J. Vac. Sci. Technol. A 29, 31507 (2011). 10.1116/1.3572232
-
(2011)
J. Vac. Sci. Technol. A
, vol.29
, pp. 31507
-
-
Tanskanen, J.T.1
Bakke, J.R.2
Pekkanen, T.A.3
Bent, S.F.4
-
6
-
-
0028761966
-
-
10.1016/0169-4332(94)90192-9
-
V. Lujala, J. Skarp, M. Tammenmaa, and T. Suntola, Appl. Surf. Sci. 82-83, 34 (1994). 10.1016/0169-4332(94)90192-9
-
(1994)
Appl. Surf. Sci.
, vol.8283
, pp. 34
-
-
Lujala, V.1
Skarp, J.2
Tammenmaa, M.3
Suntola, T.4
-
8
-
-
38649099760
-
ZnO thin films prepared by atomic layer deposition and rf sputtering as an active layer for thin film transistor
-
DOI 10.1016/j.tsf.2007.03.144, PII S0040609007004038
-
S. J. Lim, S. Kwon, and H. Kim, Thin Solid Films 516, 1523 (2008). 10.1016/j.tsf.2007.03.144 (Pubitemid 351172372)
-
(2008)
Thin Solid Films
, vol.516
, Issue.7
, pp. 1523-1528
-
-
Lim, S.J.1
Kwon, S.2
Kim, H.3
-
9
-
-
78651360283
-
-
10.1016/j.apsusc.2010.11.138
-
D. Kim, H. Kang, J-M. Kim, and H. Kim, Appl. Surf. Sci. 257, 3776 (2011). 10.1016/j.apsusc.2010.11.138
-
(2011)
Appl. Surf. Sci.
, vol.257
, pp. 3776
-
-
Kim, D.1
Kang, H.2
Kim, J.-M.3
Kim, H.4
-
11
-
-
38349143370
-
-
10.1063/1.2830940
-
N. Huby, S. Ferrari, E. Guziewicz, M. Godlewski, and V. Osinniy, Appl. Phys. Lett. 92, 23502 (2008). 10.1063/1.2830940
-
(2008)
Appl. Phys. Lett.
, vol.92
, pp. 23502
-
-
Huby, N.1
Ferrari, S.2
Guziewicz, E.3
Godlewski, M.4
Osinniy, V.5
-
12
-
-
67650251862
-
-
10.1063/1.3133803
-
E. Guziewicz, M. Godlewski, T. Krajewski, L. Wachnicki, A. Szczepanik, K. Kopalko, A. Wojcik-Glodowska, E. Przezdziecka, W. Paszkoicz, E. Lusakowska, P. Kruszewski, N. Huby, G. Tallarida, and S. Ferrari, J.Appl. Phys. 105, 122413 (2009). 10.1063/1.3133803
-
(2009)
J.Appl. Phys.
, vol.105
, pp. 122413
-
-
Guziewicz, E.1
Godlewski, M.2
Krajewski, T.3
Wachnicki, L.4
Szczepanik, A.5
Kopalko, K.6
Wojcik-Glodowska, A.7
Przezdziecka, E.8
Paszkoicz, W.9
Lusakowska, E.10
Kruszewski, P.11
Huby, N.12
Tallarida, G.13
Ferrari, S.14
-
13
-
-
43049084820
-
Computational studies of conductivity in wide-band-gap semiconductors and oxides
-
DOI 10.1088/0953-8984/20/6/064230, PII S0953898408586814
-
C. G. Van de Walle, J. Phys.: Condens. Matter 20, 064230 (2008). 10.1088/0953-8984/20/6/064230 (Pubitemid 351622665)
-
(2008)
Journal of Physics Condensed Matter
, vol.20
, Issue.6
, pp. 064230
-
-
Van De Walle, C.G.1
-
15
-
-
76349107815
-
-
10.1109/TED.2009.2037178
-
D. A. Mourey, D. A. Zhao, J. Sun, and T. N. Jackson, IEEE Trans. Electron. Devices 57, 530 (2010). 10.1109/TED.2009.2037178
-
(2010)
IEEE Trans. Electron. Devices
, vol.57
, pp. 530
-
-
Mourey, D.A.1
Zhao, D.A.2
Sun, J.3
Jackson, T.N.4
-
16
-
-
33846070644
-
Investigating the stability of zinc oxide thin film transistors
-
DOI 10.1063/1.2425020
-
B. M. Cross and M. M. De Souza, Appl. Phys. Lett. 89, 263513 (2006). 10.1063/1.2425020 (Pubitemid 46058083)
-
(2006)
Applied Physics Letters
, vol.89
, Issue.26
, pp. 263513
-
-
Cross, R.B.M.1
De Souza, M.M.2
|