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Volumn 30, Issue 1, 2012, Pages

Cycle time effects on growth and transistor characteristics of spatial atomic layer deposition of zinc oxide

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; CYCLE TIME; ELECTRICAL CHARACTERISTIC; MATERIAL PROPERTY; PURGE TIME; TRANSISTOR CHARACTERISTICS;

EID: 84855585776     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3670878     Document Type: Article
Times cited : (22)

References (16)
  • 8
    • 38649099760 scopus 로고    scopus 로고
    • ZnO thin films prepared by atomic layer deposition and rf sputtering as an active layer for thin film transistor
    • DOI 10.1016/j.tsf.2007.03.144, PII S0040609007004038
    • S. J. Lim, S. Kwon, and H. Kim, Thin Solid Films 516, 1523 (2008). 10.1016/j.tsf.2007.03.144 (Pubitemid 351172372)
    • (2008) Thin Solid Films , vol.516 , Issue.7 , pp. 1523-1528
    • Lim, S.J.1    Kwon, S.2    Kim, H.3
  • 13
    • 43049084820 scopus 로고    scopus 로고
    • Computational studies of conductivity in wide-band-gap semiconductors and oxides
    • DOI 10.1088/0953-8984/20/6/064230, PII S0953898408586814
    • C. G. Van de Walle, J. Phys.: Condens. Matter 20, 064230 (2008). 10.1088/0953-8984/20/6/064230 (Pubitemid 351622665)
    • (2008) Journal of Physics Condensed Matter , vol.20 , Issue.6 , pp. 064230
    • Van De Walle, C.G.1
  • 16
    • 33846070644 scopus 로고    scopus 로고
    • Investigating the stability of zinc oxide thin film transistors
    • DOI 10.1063/1.2425020
    • B. M. Cross and M. M. De Souza, Appl. Phys. Lett. 89, 263513 (2006). 10.1063/1.2425020 (Pubitemid 46058083)
    • (2006) Applied Physics Letters , vol.89 , Issue.26 , pp. 263513
    • Cross, R.B.M.1    De Souza, M.M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.