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Journal of the Electrochemical Society

Volumn 158, Issue 5, 2011, Pages

Effect of Al distribution on carrier generation of atomic layer deposited Al-doped ZnO films

(5) Lee, Do Joong a Kwon, Jang Yeon a Kim, Soo Hyun b Kim, Hyun Mi a Kim, Ki Bum a

a Seoul National University (South Korea)

b Yeungnam University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AL DISTRIBUTION; AL-DOPED ZNO; AREAL DENSITIES; ATOMIC LAYER DEPOSITED; AZO FILMS; CARRIER GENERATION; DOPING EFFICIENCY; ELECTRICAL PROPERTY; HALL MEASUREMENTS; TRIMETHYLALUMINUM; ZNO MATRIX;

ATOMIC LAYER DEPOSITION; ATOMS; CARRIER CONCENTRATION; ELECTRIC PROPERTIES; SEMICONDUCTOR DOPING; THERMOANALYSIS; ZINC OXIDE;

ALUMINUM;

EID: 79953182343 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.3568881 Document Type: Article

Times cited : (38)

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