Enabling graphene-based technologies: Toward wafer-scale production of epitaxial graphene

MRS Bulletin

Volumn 37, Issue 12, 2012, Pages 1149-1157

  Nyakiti, L O ^a   Wheeler, V D ^a   Garces, N Y ^a   Myers Ward, R L ^a   Eddy, C R ^a   Gaskill, D K ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GRAPHENE; KEY ELEMENTS; NONUNIFORMITY; OPERATING FREQUENCY; SPECIFIC COMPONENT; SUBSTRATE QUALITY; WAFER-SCALE;

ELECTRIC PROPERTIES; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; SILICON CARBIDE; SUBSTRATES;

GRAPHENE;

EID: 84870029838     PISSN: 08837694     EISSN: None     Source Type: Journal    
DOI: 10.1557/mrs.2012.180     Document Type: Article

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