Charge transfer equilibria in ambient-exposed epitaxial graphene on (0001̄) 6 H-SiC

Journal of Applied Physics

Volumn 111, Issue 11, 2012, Pages

  Sidorov, Anton N ^a   Gaskill, Kurt ^b   Buongiorno Nardelli, Marco ^c,d   Tedesco, Joseph L ^b   Myers Ward, Rachel L ^b   Eddy, Charles R ^b   Jayasekera, Thushari ^c   Kim, Ki Wook ^e   Jayasingha, Ruwantha ^f   Sherehiy, Andriy ^f   Stallard, Robert ^f   Sumanasekera, Gamini U ^f  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c OAK RIDGE NATIONAL LABORATORY   (United States)

^d UNIVERSITY OF NORTH TEXAS   (United States)

^e NORTH CAROLINA STATE UNIVERSITY   (United States)

^f UNIVERSITY OF LOUISVILLE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; ELECTRONIC STRUCTURE; INTERFACES (MATERIALS); SILICON CARBIDE; SUBSTRATES; TRANSPORT PROPERTIES;

ACTIVE MATERIAL; AMBIENT GAS; AMBIENTS; BULK-LIKE; ELECTROCHEMICALS; ELECTRONICS MATERIALS; EPITAXIAL GRAPHENE; PROPERTY; TRANSFER EQUILIBRIUM; ULTRA-THIN;

GRAPHENE;

EID: 84863323623     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4725413     Document Type: Conference Paper

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