Improvement of morphology and free carrier mobility through argon-assisted growth of epitaxial graphene on silicon carbide

ECS Transactions

Volumn 19, Issue 5, 2009, Pages 137-150

  Tedesco, J L ^a   VanMil, B L ^a   Myers Ward, R L ^a   Culbertson, J C ^a   Jernigan, G G ^a   Campbell, P M ^a   McCrate, J M ^a   Kitt, S A ^a   Eddy Jr , C R ^a   Gaskill, D K ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; ATOMIC FORCE MICROSCOPY; CMOS INTEGRATED CIRCUITS; GRAPHENE; HOLE MOBILITY; IMAGE ENHANCEMENT; MORPHOLOGY; SILICON CARBIDE;

ARGON ATMOSPHERES; EPITAXIAL GRAPHENE; EPITAXIALLY GROWN; HALL EFFECT MEASUREMENT; HIGH-VACUUM CONDITIONS; SHEET CARRIER DENSITIES; SI FACES;

HALL MOBILITY;

EID: 77149172072     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3119538     Document Type: Conference Paper

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