Epitaxial graphene growth on SiC wafers

ECS Transactions

Volumn 19, Issue 5, 2009, Pages 117-124

  Gaskill, D K ^a   Jernigan, G G ^a   Campbell, P M ^a   Tedesco, J L ^a   Culbertson, J C ^a   VanMil, B L ^a   Myers Ward, R L ^a   Eddy Jr , C R ^a   Moon, J ^b   Curtis, D ^b   Hu, M ^b   Wong, D ^b   McGuire, C ^b   Robinson, J A ^c   Fanton, M A ^c   Stitt, J P ^c   Stitt, T ^c   Snyder, D ^c   Wang, X ^c   Frantz, E ^c  

^a NAVAL RESEARCH LABORATORY   (United States)

^b Hughes Aircraft Co   (United States)

^c PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; FIELD EFFECT TRANSISTORS; GRAPHENE; SILICON CARBIDE; SILICON WAFERS;

COMMERCIAL CHEMICALS; EPITAXIAL GRAPHENE; GROWTH CONDITIONS; MONOLAYER THICKNESS; SI FACES; SIC SUBSTRATES;

SILICON COMPOUNDS;

EID: 77149151250     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3119535     Document Type: Conference Paper

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