Top-down fabricated silicon nanowires under tensile elastic strain up to 4.5%

Nature Communications

Volumn 3, Issue , 2012, Pages

  Minamisawa, R A ^a   Suess M J ^b   Spolenak, R ^b   Faist, J ^b   David, C ^a   Gobrecht, J ^a   Bourdelle, K K ^c   Sigg, H ^a  

^a PAUL SCHERRER INSTITUTE   (Switzerland)

^b ETH ZURICH   (Switzerland)

^c PARC TECHNOLOGIQUE DES FONTAINES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

METAL OXIDE; NANOWIRE; SILICON;

ELASTICITY; NANOTECHNOLOGY; SEMICONDUCTOR INDUSTRY; SILICON; STRAIN; TENSILE STRENGTH;

ARTICLE; CHEMICAL STRUCTURE; CONTROLLED STUDY; ELASTICITY; NANOFABRICATION; SEMICONDUCTOR; TENSILE STRENGTH;

NANOTECHNOLOGY; NANOWIRES; SILICON; TENSILE STRENGTH;

SIGE;

EID: 84869390537     PISSN: None     EISSN: 20411723     Source Type: Journal    
DOI: 10.1038/ncomms2102     Document Type: Article

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