Influence of thickness and annealing temperature on the electrical, optical and structural properties of AZO thin films

Vacuum

Volumn 89, Issue 1, 2013, Pages 127-131

  Wang, F ^a   Wu, M Z ^a   Wang, Y Y ^a   Yu, Y M ^a   Wu, X M ^a   Zhuge, L J ^a  

^a SOOCHOW UNIVERSITY   (China)

Author keywords

Annealing; AZO; RF magnetron sputtering; Thickness; ZnO

Indexed keywords

AL-DOPED ZNO; ANNEALING IN VACUUM; ANNEALING TEMPERATURES; AZO; AZO THIN FILMS; CHARACTERIZATION TECHNIQUES; CRYSTALLINITIES; DIFFRACTION PEAKS; ELECTRICAL , OPTICAL AND STRUCTURAL PROPERTIES; ELECTRICAL RESISTANCES; ELECTRODE LAYERS; HALL EFFECT MEASUREMENT; QUARTZ SUBSTRATE; RADIO FREQUENCY MAGNETRON SPUTTERING; RF-MAGNETRON SPUTTERING; ROOM TEMPERATURE; THICKNESS; THIN FILM SOLAR CELLS; TRANSPARENT CONDUCTIVE; TRANSPARENT CONDUCTIVE OXIDES; VISIBLE RANGE; ZNO;

ANNEALING; ATOMIC FORCE MICROSCOPY; MAGNETRON SPUTTERING; OPTICAL PROPERTIES; QUARTZ; SCANNING ELECTRON MICROSCOPY; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION; ZINC OXIDE;

ELECTRIC PROPERTIES;

EID: 84869097784     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2012.02.040     Document Type: Conference Paper

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